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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BZV49 series Voltage regulator diodes
Product specification Supersedes data of 1996 Oct 28 1999 May 11
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES * Total power dissipation: max. 1 W * Tolerance series: approx. 5% * Working voltage range: nom. 2.4 to 75 V (E24 range) * Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS * General regulation functions. DESCRIPTION Medium-power voltage regulator diodes in a SOT89 plastic SMD package. The diodes are available in the normalized E24 approx. 5% tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V (BZV49-C2V4 to BZV49-C75).
1
Bottom view
BZV49 series
PINNING PIN 1 2 3 anode anode cathode DESCRIPTION
handbook, halfpage
1
2
3 3 2
MAM244
Fig.1 Simplified outline (SOT89) and symbol.
MARKING TYPE NUMBER BZV49-C2V4 BZV49-C2V7 BZV49-C3V0 BZV49-C3Y3 BZV49-C3V6 BZV49-C3V9 BZV49-C4V3 BZV49-C4V7 BZV49-C5V1 BZV49-C5V6 MARKING CODE 2Y4 2Y7 3Y0 3Y3 3Y6 3Y9 4Y3 4Y7 5Y1 5Y6 TYPE NUMBER BZV49-C6V2 BZV49-C6V8 BZV49-C7V5 BZV49-C8V2 BZV49-C9V1 BZV49-C10 BZV49-C11 BZV49-C12 BZV49-C13 BZV49-C15 MARKING CODE 6Y2 6Y8 7Y5 8Y2 9Y1 10Y 11Y 12Y 13Y 15Y TYPE NUMBER BZV49-C16 BZV49-C18 BZV49-C20 BZV49-C22 BZV49-C24 BZV49-C27 BZV49-C30 BZV49-C33 BZV49-C36 BZV49-C39 MARKING CODE 16Y 18Y 20Y 22Y 24Y 27Y 30Y 33Y 36Y 39Y TYPE NUMBER BZV49-C43 BZV49-C47 BZV49-C51 BZV49-C56 BZV49-C62 BZV49-C68 BZV49-C75 - - - MARKING CODE 43Y 47Y 51Y 56Y 62Y 68Y 75Y - - -
1999 May 11
2
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. ELECTRICAL CHARACTERISTICS Total series Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.3 PARAMETER continuous forward current non-repetitive peak reverse current tp = 100 s; square wave; Tj = 25 C prior to surge total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature Tamb = 25 C; note 1 tp = 100 s; square wave; Tj = 25 C prior to surge; see Fig.2 CONDITIONS - MIN.
BZV49 series
MAX. 250
UNIT mA
see Table "Per type" - - -65 - 1 40 +150 150 W W C C
MAX. 1
UNIT V
1999 May 11
3
1999 May 11 4
Philips Semiconductors
Per type Tj = 25 C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif () at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5 TEST DIODE CAP. CURRENT Cd (pF) IZtest (mA) at f = 1 MHz; at VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (A) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 TYP. 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 10 10 10 10 15 MAX. 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 MIN. -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -2.7 -2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 TYP. MAX. -1.6 -2.0 -2.1 -2.4 -2.4 -2.5 -2.5 -1.4 -0.8 +1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 16.4 0 0 0 0 0 0 0 +0.2 +1.2 +2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 MAX. 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 MAX. 50 20 10 5 5 3 3 3 2 1 3 2 1 0.7 0.5 0.2 0.1 0.1 0.1 0.05 0.05 0.05 0.05 VR (V) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 2.0 4.0 4.0 5.0 5.0 6.0 7.0 8.0 8.0 8.0 10.5 11.2 12.6 14.0 NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 s; Tamb = 25 C MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5
Voltage regulator diodes
BZV49CXXX
BZV49 series
2.5 2.0 1.5 1.5 1.5
Product specification
1999 May 11 5
Philips Semiconductors
BZV49CXXX
WORKING VOLTAGE VZ (V) at IZtest
DIFFERENTIAL RESISTANCE rdif () at IZtest
TEMP. COEFF. SZ (mV/K) at IZtest see Figs 4 and 5
DIODE CAP. TEST Cd (pF) CURRENT IZtest (mA) at f = 1 MHz; at VR = 0 V
REVERSE CURRENT at REVERSE VOLTAGE IR (A) VR (V) 15.4 16.8 18.9 21.0 23.1 25.2 27.3 30.1 32.9 35.7 39.2 43.4 47.6 52.5
NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 s; Tamb = 25 C MAX. 1.25 1.25 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2
Voltage regulator diodes
MIN. 22 24 27 30 33 36 39 43 47 51 56 62 68 75 20.8 22.8 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0
MAX. 23.3 25.6 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0
TYP. 20 25 25 30 35 35 40 45 50 60 70 80 90 95
MAX. 55 70 80 80 80 90 130 150 170 180 200 215 240 255
MIN. 16.4 18.4 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4
TYP. MAX. 18.4 20.4 23.4 26.6 29.7 33.0 36.4 41.2 46.1 51.0 57.0 64.4 71.7 80.2 20.0 22.0 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6 5 5 2 2 2 2 2 2 2 2 2 2 2 2
MAX. 60 55 50 50 45 45 45 40 40 40 40 35 35 35
MAX. 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05 0.05
BZV49 series
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a ceramic substrate; area = 2.5 cm2; thickness = 0.7 mm. GRAPHICAL DATA PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS
BZV49 series
VALUE 15 125
UNIT K/W K/W
103 handbook, halfpage PZSM (W) 102
MBG801
MBG781
handbook, halfpage
300
IF (mA) 200
(1)
10
(2)
100
1 10-1
1
duration (ms)
10
0 0.6
0.8
VF (V)
1.0
(1) Tj = 25 C (prior to surge). (2) Tj = 150 C (prior to surge).
Tj = 25 C.
Fig.2
Maximum permissible non-repetitive peak reverse power dissipation versus duration.
Fig.3
Forward current as a function of forward voltage; typical values.
1999 May 11
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV49 series
handbook, full pagewidth
1
MBG927
SZ (mV/K) 0
4V3 3V9 3V6
3V3 -1 3V0
-2 2V7 2V4
-3 10-3
10-2
10-1
IZ (A)
1
BZV49-C2V4 to C4V3. Tj = 25 to 150 C.
Fig.4 Temperature coefficient as a function of working current; typical values.
MBG924
handbook, halfpage
10
SZ (mV/K) 10 5 9V1 8V2 7V5 6V8
6V2 5V6 5V1 4V7
0
-5
0
4
8
12
16
IZ (mA)
20
BZV49-C4V7 to C10. Tj = 25 to 150 C.
Fig.5
Temperature coefficient as a function of working current; typical values.
1999 May 11
7
Philips Semiconductors
Product specification
Voltage regulator diodes
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BZV49 series
SOT89
D
B
A
b3
E HE
L
1
2
b2
3
c
wM
b1 e1 e
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13
OUTLINE VERSION SOT89
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 May 11
8
Philips Semiconductors
Product specification
Voltage regulator diodes
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BZV49 series
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 May 11
9
Philips Semiconductors
Product specification
Voltage regulator diodes
NOTES
BZV49 series
1999 May 11
10
Philips Semiconductors
Product specification
Voltage regulator diodes
NOTES
BZV49 series
1999 May 11
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 64
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Printed in The Netherlands
115002/00/03/pp12
Date of release: 1999 May 11
Document order number:
9397 750 05927

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